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SBL25L30CTHE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 30V 12.5A TO2203. Review the specifications below when checking this part for your BOM.
The SBL25L30CTHE3/45 is a dual common-cathode Schottky rectifier manufactured by Vishay General Semiconductor. It features a maximum repetitive peak reverse voltage of 30 V and a total average forward rectified current of 25 A, with each diode rated at 12.5 A. The device exhibits a low forward voltage drop of 0.39 V at 12.5 A and 125 °C, alongside a high peak forward surge current capability of 180 A. Operating junction temperatures range from -55 °C to +150 °C.
Verify the specific ordering code against the manufacturer's official documentation to ensure compliance with RoHS directives and AEC-Q101 automotive qualification requirements. Confirm that the package type matches the intended thermal management strategy, as thermal resistance varies between TO-220AB and D2PAK configurations. Cross-reference datasheet revision dates to validate electrical characteristics prior to final design integration.
Select this component for applications requiring low forward voltage drops and high surge tolerance in compact packages. Evaluate thermal resistance values based on the chosen package variant to ensure adequate heat dissipation under continuous load conditions. Ensure the operating environment remains within the specified temperature range to maintain performance stability and longevity.
This part belongs to the SBL25LxxCT series of dual low VF Schottky barrier rectifiers. The series includes variants such as SBL25L20CT and SBLB25L30CT, offering different voltage ratings and package options like ITO-220AB and D2PAK. All share common features including metal silicon junction technology and guardring overvoltage protection.
SBL25L30CT-E3/45
The maximum repetitive peak reverse voltage (VRRM) is 30 V.
Yes, the HE3 suffix indicates it is AEC-Q101 qualified for automotive use.
For the TO-220AB package, the typical thermal resistance from junction to case is 1.5 °C/W per diode.
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