SC8673010L

Overview

The SC8673010L is an asymmetric dual N-channel power MOSFET manufactured by Panasonic Industry. It integrates two distinct transistors within a single HSO8-F3-B surface-mount package. FET1 provides a drain-source voltage of 30 V, continuous current of 16 A, and typical on-resistance of 10 mΩ at VGS = 4.5 V. FET2 offers the same 30 V rating but supports 40 A continuous current with a lower typical on-resistance of 2.5 mΩ at VGS = 4.5 V. The device operates between -40°C and +85°C, features a total gate charge of 6.3 nC for FET1, and utilizes thermo-compression sealing in reels of 3,000 units.

Feature Summary

• Asymmetric dual configuration combining high-current low-resistance switching with standard logic-level control capabilities
• Optimized thermal performance through dedicated channel-to-case and channel-to-ambient resistance pathways
• Logic-level gate drive compatibility enabling efficient control with standard voltage levels

Applications

• DC-DC converter circuits requiring mixed current handling profiles
• Power management modules utilizing asymmetric load requirements
• General purpose office equipment and communications hardware

Procurement Notes

Verify component authenticity against official Panasonic datasheets due to discontinuation status. Confirm package integrity as the device uses thermo-compression sealing. Check RoHS compliance documentation prior to integration. Ensure storage conditions meet moisture sensitivity level requirements before soldering processes begin.

Selection Notes

Evaluate thermal dissipation requirements carefully given the asymmetric power ratings of the internal transistors. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds. Verify that the HSO8-F3-B footprint matches existing PCB land patterns. Consider the specific on-resistance values at intended operating voltages for efficiency calculations.

Part Context

This component belongs to the SC8 series of silicon N-channel enhancement mode MOSFETs designed for surface mount applications. It shares the HSO8-F3-B packaging format with other Panasonic discrete semiconductors. The series targets general electronic equipment where compact dual-transistor solutions are preferred over separate components.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Panasonic Industry directly for lifecycle updates or recommended alternative devices within the current portfolio.