SCH2408-TL-E

$0.07

Description：MOSFET N-CH
Series：*

SKU:b85784cb6307 Category: FET, MOSFET Arrays Brand: Sanyo

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH
Series：*
Mfr：Sanyo
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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SCH2408-TL-E

Overview

The SCH2408-TL-E is a P-Channel Silicon MOSFET manufactured by Sanyo Semiconductors. It operates in depletion mode and is designed for general-purpose switching applications. The device supports a drain-to-source voltage of -30V and a gate-to-source voltage of ±10V. Continuous DC drain current is rated at -200mA, with a pulsed drain current capability of -800mA under specific pulse conditions. The component features low on-resistance and is compatible with 1.5V drive levels. Maximum power dissipation is 0.65W when mounted on a ceramic substrate. The junction temperature range extends up to 150°C, and the storage temperature spans from -55°C to +150°C.

Feature Summary

Composite type with two MOSFETs contained in a single package to facilitate high-density mounting
Low ON-resistance characteristics
Compatible with 1.5V drive levels

Applications

General-Purpose Switching Device

Procurement Notes

Verify the manufacturer designation carefully, as the SCH2408 series was originally produced by Sanyo Semiconductor, which later became part of ROHM Semiconductor. Confirm that the specific suffix '-TL-E' corresponds to the intended packaging and tape-and-reel configuration required for your assembly process. Cross-reference the ordering number ENA1217 or similar identifiers found in original datasheets to ensure component authenticity and correct revision level.

Selection Notes

Select this component for applications requiring a compact P-channel depletion mode solution with low on-resistance. Ensure the design accommodates the -30V drain-to-source voltage limit and the 0.65W power dissipation constraint. Verify that the system can handle the -200mA continuous current rating and that the thermal management strategy supports the 150°C maximum channel temperature specification during operation.

Part Context

The SCH2408 belongs to a family of P-Channel Silicon MOSFETs designed for efficient switching in space-constrained environments. Originally developed by Sanyo Semiconductor, these devices are characterized by their depletion mode operation and dual-MOSFET composite structure within a single surface-mount package. This architecture allows for simplified circuit designs while maintaining high performance standards for general-purpose switching tasks.