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Product Detailed Parameters
- Description：NCH+SBD 1.8V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SCH2806-TL-E is a discrete semiconductor component manufactured by onsemi, classified within the FET and MOSFET array category. It features an N-channel configuration combined with a Schottky barrier diode (SBD). The device is engineered for low-voltage applications, specifically supporting a 1.8V drive series operation mode. This integration allows for efficient switching and rectification in compact surface-mount designs.
Feature Summary
- Integrates N-channel MOSFET functionality with a Schottky barrier diode in a single package
- Optimized for 1.8V drive series applications to support low-voltage logic interfaces
Applications
- Low-voltage power management circuits
- Logic-level switching applications requiring integrated rectification
- Compact consumer electronics power stages
Procurement Notes
Verify the specific package type and pinout configuration against the official onsemi datasheet before integration, as distributor listings may lack detailed mechanical drawings. Confirm that the 1.8V drive requirement aligns with your system's logic levels. Ensure the supplier provides authentic components from authorized channels to guarantee performance reliability and thermal characteristics match the published specifications.
Selection Notes
Select this component when a combined N-channel switch and Schottky rectifier are required in a minimal footprint. It is suitable for systems operating with 1.8V control signals where standard MOSFETs might not turn on fully. Consider the thermal dissipation capabilities of the chosen package variant and ensure the reverse voltage ratings of both the FET and SBD meet the circuit's maximum transient requirements.
Part Context
This part belongs to onsemi's lineup of integrated discrete semiconductors designed for space-constrained applications. By combining active switching and passive rectification elements, it reduces component count and PCB area compared to using separate devices. The product line targets modern portable and battery-operated devices where efficiency and size are critical design constraints.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative N-channel/SBD integrated devices by matching electrical parameters such as threshold voltage, forward voltage drop, and current ratings.
