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Product Detailed Parameters
- Description：NCH+SBD 1.8V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SCH2817-TL-E is a discrete semiconductor component manufactured by onsemi, classified within the field-effect transistor (FET) and MOSFET product categories. It belongs to the NCH+SBD 1.8V Drive Series, indicating it integrates an N-channel MOSFET with a Schottky barrier diode (SBD). This configuration is designed for low-voltage drive applications requiring efficient switching and protection characteristics.
Feature Summary
- Integrates an N-channel MOSFET with a Schottky barrier diode in a single package
- Optimized for 1.8V drive series applications
- Designed for efficient switching performance in low-voltage circuits
Applications
- Low-voltage power management systems
- Switching applications requiring integrated body diode alternatives
- Portable electronic devices with limited drive voltage headroom
Procurement Notes
Verify the specific package type and pinout configuration against the official datasheet before integration. Confirm that the 1.8V drive requirement aligns with your system's logic levels. Ensure the integrated SBD specifications meet your circuit's reverse recovery needs. Check for any RoHS compliance documentation if required by your manufacturing standards.
Selection Notes
Select this component when a combined N-channel MOSFET and Schottky diode solution is needed for space-constrained designs. The 1.8V drive capability makes it suitable for modern low-power logic interfaces. Evaluate the thermal performance and current handling capabilities against your specific load requirements to ensure reliable operation under expected conditions.
Part Context
This part falls under onsemi's discrete semiconductor portfolio, specifically focusing on advanced MOSFET technologies. The inclusion of a Schottky barrier diode suggests optimization for applications where fast recovery and low forward voltage drop are critical. It represents a move towards integrated solutions that simplify board layout and reduce component count in power management architectures.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided data. Verify compatibility with existing footprints and electrical parameters if considering alternative vendors or updated series from onsemi.
