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Product Detailed Parameters
- Description：NCH+SBD 1.8V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
SCH2817-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 12 V and a continuous drain current of 3 A. The device utilizes an SCH surface-mount package with six pins, measuring 1.6 mm in length, 1.5 mm in width, and 0.56 mm in height. Key electrical parameters include a maximum drain-source on-resistance of 84 mΩ, a typical gate charge of 5.6 nC at 4.5 V, and a maximum power dissipation of 1 W. The component operates within a temperature range up to +150 °C.
Feature Summary
- P-channel enhancement mode operation for low-side switching applications
- Compact SCH surface-mount package design suitable for space-constrained layouts
- Low on-resistance characteristics for efficient power handling
Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix and manufacturer documentation to confirm exact specifications before integration. Ensure compatibility with existing thermal and electrical design constraints. Cross-reference official datasheets for precise pinout and absolute maximum ratings to prevent operational errors during implementation.
Selection Notes
Select this component based on its 12 V rating and 3 A current capacity requirements. Evaluate the SCH package dimensions against available PCB real estate. Consider the 84 mΩ on-resistance for efficiency calculations and verify that the gate drive voltage aligns with the specified threshold characteristics for optimal performance.
Part Context
This part belongs to the onsemi MOSFET portfolio, specifically designed as a single N-channel or P-channel enhancement mode device. The SCH package provides a compact footprint for surface-mount technology applications. It is engineered for general-purpose switching tasks requiring moderate current handling capabilities.
Replacement Considerations
Direct substitutes may include other P-channel MOSFETs with similar 12 V ratings and SCH packaging. Verify pinout compatibility and electrical parameters such as Rds(on) and gate charge when considering alternative components from different manufacturers.
