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SCT025H120G3-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is SILICON CARBIDE POWER MOSFET 120. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SCT025H120G3-7
- Description：SILICON CARBIDE POWER MOSFET 120
- Series：*
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for SCT025H120G3-7
Single FETs, MOSFETs Overview
The SCT025H120G3-7 is a silicon carbide power MOSFET from STMicroelectronics, utilizing third-generation SiC technology. It features a single N-channel configuration with a drain-source breakdown voltage of 1200 V and a typical on-resistance of 27 mOhms. The device supports a continuous drain current of 55 A and operates within a temperature range of -55°C to +175°C. Packaged in an H2PAK-7 format for surface mount installation, it exhibits a gate charge of 73 nC and a power dissipation capacity of 375 W.
Single FETs, MOSFETs Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Very low on-resistance maintained across the entire operating temperature range
- High-speed switching performance capabilities
- Robust intrinsic body diode characteristics
Single FETs, MOSFETs Applications
- Automotive power electronics systems
- High-efficiency DC-DC converters
- On-board charger modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and package variations. Ensure compatibility with thermal management requirements specified in the datasheet. Confirm AEC-Q101 qualification status if deploying in automotive environments. Cross-reference pinout configurations with the official ECAD model before PCB integration.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage handling and low conduction losses at elevated temperatures. The H2PAK-7 package offers a compact solution for surface-mount designs. Consider the 1200 V rating for robustness against voltage transients. Evaluate the 55 A current capability against peak load requirements to ensure adequate headroom.
Single FETs, MOSFETs Part Context
This device belongs to STMicroelectronics' third-generation silicon carbide MOSFET family. These components are engineered to replace traditional silicon counterparts in high-power applications. The series emphasizes improved efficiency and reduced system size through advanced material properties and optimized cell architecture.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other AEC-Q101 qualified SiC MOSFETs with similar 1200 V ratings and comparable Rds(on) values in the H2PAK-7 package. Verify gate charge and threshold voltage compatibility to ensure driver circuit alignment.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
