SCT3080KRC14

Single FETs, MOSFETs Overview

The SCT3080KRC14 is a third-generation N-channel Silicon Carbide (SiC) MOSFET manufactured by ROHM Semiconductor. It features a trench gate structure designed to reduce on-resistance compared to planar types. The device operates with a drain-source voltage of 1200 V and supports a continuous drain current of 31 A. Its typical on-state resistance is 80 mΩ, with a maximum power dissipation of 165 W. The component utilizes a TO-247-4 package for through-hole mounting and supports junction temperatures up to +175 °C.

Single FETs, MOSFETs Feature Summary

• Trench gate structure reduces on-resistance by approximately 50% relative to planar SiC-MOSFETs of the same chip size.
• Fast switching speed and fast reverse recovery characteristics minimize power loss in high-frequency applications.
• Qualified to AEC-Q101 automotive grade standards for reliability.
• Simple drive requirements facilitate easy parallel operation.

Single FETs, MOSFETs Applications

• Power conditioners for solar power generation systems
• Power supplies for industrial equipment
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'C14' against the official ROHM datasheet to confirm pinout and packaging details. Note that this component carries an NRND (Not Recommended for New Designs) status; alternative models within the SCT3x series should be evaluated for long-term supply stability before integration into new products.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low conduction losses and robust thermal performance. The 1200V rating suits high-power conversion tasks. Ensure the design accommodates the TO-247-4 footprint and through-hole assembly process. Consider the NRND status when planning product lifecycles.

Single FETs, MOSFETs Part Context

This part belongs to the SCT3x series of third-generation SiC MOSFETs from ROHM. These devices utilize advanced trench technology to enhance efficiency. The series includes variants with different voltage ratings and packages, such as the SCT3080KRC15 and SCT3080AW7TL, offering options for both through-hole and surface-mount designs.

Single FETs, MOSFETs Replacement Considerations

The SCT3080KRC15 is a similar 1200V 31A N-channel SiC MOSFET in the same TO-247-4 package with identical electrical specifications. Verify if the KRC15 is available as a direct substitute given the NRND status of the KRC14.