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SCT3120ALHRC11 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is SICFET N-CH 650V 21A TO247N. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SCT3120ALHRC11
- Description：SICFET N-CH 650V 21A TO247N
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id：5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 18 V
- Vgs (Max)：+22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：103W
- Operating Temperature：175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-247N
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for SCT3120ALHRC11
Single FETs, MOSFETs Overview
The SCT3120ALHRC11 is a third-generation N-channel Silicon Carbide (SiC) power MOSFET manufactured by Rohm Semiconductor. It features a trench gate structure and is housed in a TO-247N package. Key electrical specifications include a drain-source voltage of 650V, a typical on-state resistance of 120 mΩ, and a continuous drain current of 21A at case temperature. The device supports a maximum junction temperature of 175°C with a total power dissipation of 103W. It is qualified to the AEC-Q101 automotive standard.
Single FETs, MOSFETs Feature Summary
- Trench gate structure reduces on-resistance compared to planar types
- Fast switching speed capabilities
- Fast reverse recovery characteristics
- Qualified to AEC-Q101 automotive grade standards
Single FETs, MOSFETs Applications
- Solar power generation power conditioners
- Industrial equipment power supplies
- Industrial inverters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix C11 for tube packaging configuration. Confirm RoHS compliance status and long-term supply availability periods. Ensure the component matches the exact 650V rating and TO-247N form factor required for the target circuit design before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low conduction losses and high reliability in harsh environments. The AEC-Q101 qualification makes it suitable for automotive-grade designs. Consider the 120 mΩ on-resistance for efficiency optimization in power conversion stages operating within the specified thermal limits.
Single FETs, MOSFETs Part Context
This part belongs to Rohm's third-generation SiC MOSFET lineup, designed to improve efficiency over previous planar technologies. It is distinct from higher-voltage 1200V variants like the SCT3160 series and lower-current options within the same family.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes are not explicitly confirmed in public documentation. Verify pin compatibility and electrical ratings if considering alternative manufacturers or different Rohm series parts.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
