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SCT4013DEC11 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is 750V, 105A, 3-PIN THD, TRENCH-ST. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SCT4013DEC11
- Description：750V, 105A, 3-PIN THD, TRENCH-ST
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：750 V
- Current - Continuous Drain (Id) @ 25°C：105A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：18V
- Rds On (Max) @ Id, Vgs：16.9mOhm @ 58A, 18V
- Vgs(th) (Max) @ Id：4.8V @ 30.8mA
- Gate Charge (Qg) (Max) @ Vgs：170 nC @ 18 V
- Vgs (Max)：+21V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：4580 pF @ 500 V
- FET Feature：-
- Power Dissipation (Max)：312W
- Operating Temperature：175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247N
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for SCT4013DEC11
Single FETs, MOSFETs Overview
The SCT4013DEC11 is a silicon carbide (SiC) MOSFET from ROHM's fourth-generation Trench structure series. It features a drain-source voltage of 750V and a typical on-state resistance of 13mΩ. The device supports a continuous drain current of 105A with a total power dissipation of 312W. It operates within a junction temperature range up to 175°C and utilizes a TO-247N package.
Single FETs, MOSFETs Feature Summary
- Fourth-generation trench structure technology for improved short-circuit tolerance
- Ultra-low on-resistance reducing conduction losses compared to previous generations
- Fast switching speed and fast reverse recovery characteristics
- Supports 15V gate-source voltage for simplified drive circuit design
Single FETs, MOSFETs Applications
- Industrial power supplies
- Solar inverters
- Uninterruptible power supply systems
- High-efficiency motor drives
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'C11' against the official datasheet to confirm pinout and electrical tolerances. Confirm RoHS compliance status and long-term availability plans before finalizing component selection for production designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high efficiency and compact size. Ensure the driving circuit supports the specified 15V gate-source voltage. Verify thermal management capabilities to maintain junction temperatures within the 175°C maximum limit during operation.
Single FETs, MOSFETs Part Context
This part belongs to the SCT4013DE series, representing ROHM's fourth-generation SiC MOSFETs. This generation offers approximately 40% lower on-resistance and 50% reduced switching loss compared to prior products. The series is designed for standard-grade industrial applications rather than automotive use.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same SCT4013DE family or other 750V 105A TO-247N SiC MOSFETs. Ensure any replacement matches the 13mΩ Rds(on) and 105A Id specifications while maintaining compatible gate drive requirements.
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