SCT50N120

$23.32

Description：SICFET N-CH 1200V 65A HIP247
Series：-
Mfr：STMicroelectronics
Package：Tube

SKU:123ce6053295 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

SCT50N120 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is SICFET N-CH 1200V 65A HIP247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SCT50N120

Description：SICFET N-CH 1200V 65A HIP247
Series：-
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id：3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：122 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：318W (Tc)
Operating Temperature：-55°C ~ 200°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：HiP247™
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SCT50N120

SCT50N120

Single FETs, MOSFETs Overview

The SCT50N120 is a silicon carbide (SiC) Power MOSFET manufactured by STMicroelectronics, housed in the HiP247 through-hole package. It features an N-channel enhancement mode configuration with a drain-source voltage rating of 1200 V and a continuous drain current of 65 A at 25 °C case temperature. The device exhibits a typical on-resistance of 52 mΩ at 25 °C, rising to 70 mΩ at 200 °C junction temperature. Key electrical parameters include a gate threshold voltage of 1.8 V, total gate charge of 122 nC, and input capacitance of 1900 pF. Thermal resistance from junction to case is 0.55 °C/W, supporting operation up to a maximum junction temperature of 200 °C.

Single FETs, MOSFETs Feature Summary

Very low RDS(on) maintained across the entire operating temperature range
High operating junction temperature capability reaching 200 °C
Fast and robust intrinsic body diode performance
Low capacitance characteristics for efficient switching

Single FETs, MOSFETs Applications

AC-DC converters
DC-DC converters
Motor drives
Solar inverters (string and central)
Uninterruptable power supplies (UPS)

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet revision status prior to integration. Confirm that the HiP247 package dimensions align with PCB footprint requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Check for environmental compliance documentation such as ECOPACK grades if required by specific application standards.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency designs requiring wide bandgap material advantages. The SiC technology offers superior switching performance independent of temperature compared to silicon alternatives. Consider the 200 °C junction limit when designing thermal dissipation strategies. Evaluate the low gate charge for driver compatibility in high-frequency applications.

Single FETs, MOSFETs Part Context

This device belongs to the SCT series of silicon carbide power MOSFETs from STMicroelectronics. It utilizes advanced wide bandgap material properties to achieve high power density. The HiP247 package provides an industry-standard outline with enhanced thermal capabilities, allowing designers to leverage existing form factors while improving performance metrics.