SCTW40N120G2VAG

$15.61

Description：SICFET N-CH 1200V 33A HIP247
Series：-
Mfr：STMicroelectronics
Package：Tube

SKU:1fd855e4a95d Category: Single FETs, MOSFETs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SCTW40N120G2VAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is SICFET N-CH 1200V 33A HIP247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SCTW40N120G2VAG

Description：SICFET N-CH 1200V 33A HIP247
Series：-
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：63 nC @ 18 V
Vgs (Max)：+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1230 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：290W (Tc)
Operating Temperature：-55°C ~ 200°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：HiP247™
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for SCTW40N120G2VAG

SCTW40N120G2VAG

Single FETs, MOSFETs Overview

The SCTW40N120G2VAG is an automotive-grade silicon carbide power MOSFET utilizing ST’s second-generation SiC technology. It features a 1200 V drain-source voltage and a typical on-resistance of 75 mΩ at 25 °C, with a maximum rating of 105 mΩ. The device supports a continuous drain current of 33 A at 25 °C case temperature and operates up to a junction temperature of 200 °C. Packaged in HiP247, it exhibits low gate charge (63 nC) and switching energy values of 235 µJ (turn-on) and 77 µJ (turn-off).

Single FETs, MOSFETs Feature Summary

AEC-Q101 qualified for automotive reliability standards.
Very fast and robust intrinsic body diode characteristics.
Extremely low gate charge and input capacitance for efficient switching.
High operating junction temperature capability reaching 200 °C.

Single FETs, MOSFETs Applications

Main inverter for electric traction systems
DC/DC converter for electric and hybrid vehicles
On-board charger (OBC) applications

Single FETs, MOSFETs Procurement Notes

Verify the specific order code SCTW40N120G2VAG against the latest STMicroelectronics datasheet DS12970 Rev 5 to confirm current product status and electrical parameters. Ensure compatibility with HiP247 mounting requirements and thermal management designs suitable for 200 °C junction operation. Confirm AEC-Q101 qualification status for target automotive applications before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency automotive power conversion requiring robust switching performance and high-temperature tolerance. The low on-resistance per unit area and minimal switching loss variation across temperatures make it suitable for demanding traction and charging environments. Evaluate thermal resistance values and package constraints during circuit design to maximize device reliability and performance within the specified safe operating area.

Single FETs, MOSFETs Part Context

This device belongs to STMicroelectronics' second-generation silicon carbide MOSFET portfolio, designed for advanced power electronics. It represents an evolution in SiC technology aimed at reducing on-resistance while maintaining excellent switching characteristics. The HiP247 package provides a compact solution for high-power density applications, aligning with industry trends toward more efficient and compact automotive power systems.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other automotive-grade SiC MOSFETs from STMicroelectronics with similar voltage and current ratings, such as the SCTW40N120G2V or SCT040W120G3 series. Verify pinout compatibility and thermal characteristics when replacing components to ensure seamless integration into existing PCB layouts and cooling structures.