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The SD1013 is a high-reliability RF bipolar transistor manufactured by Microsemi. It is designed for very high frequency band applications and features a single configuration with a built-in resistor. The device utilizes a flange mount package (O-PRFM-F4) constructed from plastic/epoxy material with a round shape. Key electrical specifications include a maximum collector current of 1 A, a maximum collector-emitter voltage of 35 V, and a maximum collector capacitance of 15 pF. The minimum DC current gain (hFE) is specified as 10. The component supports an operating temperature up to 200 °C and is classified under ECCN code EAR99.
Verify RoHS compliance status carefully, as official documentation indicates non-compliance. Confirm the specific flange mount package variant matches the design requirements. Ensure the supplier provides valid traceability for high-reliability standards. Check for any updated security or obsolescence notices from Microsemi before finalizing procurement decisions.
Select this component when a ruggedized RF bipolar transistor with integrated resistance is required for VHF bands. Verify that the 35 V collector-emitter voltage rating meets the circuit's peak voltage demands. Ensure the thermal management system can handle the junction temperatures associated with the 1 A collector current limit in the specified flange mount package.
The SD1013 belongs to Microsemi's portfolio of discrete semiconductor devices focused on radio frequency and microwave applications. It is part of a series of high-reliability transistors engineered for robust performance in specialized communication and radar systems. The manufacturer emphasizes durability and consistent electrical characteristics across the product line.
Consult Microsemi technical support for verified cross-reference part numbers. Ensure any substitute maintains the same flange mount footprint and electrical ratings. Verify compatibility with existing thermal interface materials and mounting hardware.