SD1019

Overview

The SD1019 is a VHF band silicon NPN RF power transistor manufactured by Microsemi. Designed primarily for VHF communications, it operates as a Class C epitaxial planar device with nichrome aluminum metallization to achieve infinite VSWR at rated conditions. Key absolute maximum ratings include a collector-base voltage of 65V and a collector-emitter voltage of 35V. At a case temperature of 25°C, the device delivers a minimum output power of 30W at 136 MHz with a gain of 4.5 dB.

Feature Summary

• Nichrome aluminum metallization structure designed to achieve infinite VSWR at rated operating conditions
• Epitaxial silicon NPN planar construction optimized for VHF communications applications
• Capable of delivering high output power in Class C operation mode

Applications

• VHF communications systems
• RF power amplification circuits

Procurement Notes

Verify the manufacturer origin carefully, as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm that the specific component matches the original Microsemi specifications and markings. Ensure the device meets the required environmental and electrical standards for your intended application before procurement.

Selection Notes

Select this component for VHF frequency range requirements where high output power is necessary. Consider the thermal management needs associated with the 35V collector-emitter voltage and total power dissipation limits. Verify compatibility with the 136 MHz operating frequency and required gain specifications for the target circuit design.

Part Context

The SD1019 belongs to the family of VHF band RF power transistors produced by Microsemi. These devices are engineered for robust performance in communication infrastructure. The use of specialized metallization distinguishes these transistors by their ability to maintain stability under varying load conditions.