SD1275-01

Overview

The SD1275-01 is a VHF mobile application RF power bipolar transistor manufactured by STMicroelectronics. It operates at 160 MHz with a supply voltage of 13.6 volts in a common emitter configuration. The device delivers a minimum output power of 40 watts with 9.0 dB gain. Key electrical specifications include a collector-base voltage of 36 volts, collector-emitter voltage of 16 volts, and maximum junction temperature of +200 °C. Thermal resistance from junction to case is 1.2 °C/W. The component utilizes an emitter ballasted die geometry for ruggedness.

Feature Summary

• Utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions
• Designed primarily for VHF communications applications
• Epitaxial silicon NPN planar transistor construction

Applications

• VHF mobile communications systems

Procurement Notes

Verify the specific order code marking against the datasheet table. Confirm the package type is M113 plastic tray packaging. Ensure the component meets the required thermal management standards given the 70 W power dissipation rating. Check for RoHS compliance status if applicable to the manufacturing batch.

Selection Notes

Select this component for VHF band designs requiring high power output around 160 MHz. Consider the 13.6 V supply requirement and the need for adequate heat sinking due to the 1.2 °C/W thermal resistance. Evaluate input impedance matching based on the provided Zin data at 160 MHz for optimal performance.

Part Context

This part belongs to the RF power bipolar transistor category from STMicroelectronics. It is specifically engineered for VHF mobile applications. The device represents a solution for high-power amplification in the 160 MHz range, distinct from lower frequency or higher frequency RF components.

Replacement Considerations

No public confirmed substitute part numbers are available in the source material.