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The SD2931-11W is a gold metallized N-channel enhancement-mode MOSFET from the SD2931 series, designed for RF power applications. It features a maximum drain-source voltage of 125 V and a continuous drain current of 20 A. The device delivers an output power of 150 W with a typical power gain of 14 dB at an operating frequency of 175 MHz. Packaged in the M174 surface-mount format with four pins, it operates within a temperature range of -65°C to 200°C.
Verify that the specific suffix '11W' denotes the gold-metallized variant rather than the standard silicon version. Confirm the M174 package footprint compatibility with your PCB design. Ensure the supplier provides official STMicroelectronics documentation to validate the electrical identity with the base SD2931 model.
Select this component when gold metallization is required for superior thermal or electrical stability compared to standard variants. It serves as a direct functional substitute for the SD2931 in designs requiring specific packaging or metallization traits. Verify that the 125 V rating and 150 W output power meet the system's voltage and power constraints.
This part belongs to the SD2931 family of RF power transistors manufactured by STMicroelectronics. The SD2931-11W is specifically the gold-metallized version, distinguished from the standard SD2931 but maintaining identical electrical characteristics. It is categorized under RF DMOS devices intended for high-frequency operation.
The SD2931-10W is a confirmed public substitute, being electrically identical to the standard SD2931 MOSFET. Both variants share the same core performance metrics and are intended for similar RF power applications.