SDS065J020G3-ISATH

Diode Arrays Overview

The SDS065J020G3-ISATH is a third-generation silicon carbide Schottky barrier diode manufactured by Hunan Sanan Semiconductor. It features a TO-247-3L package and dual-anode common-cathode configuration. Key electrical parameters include a repetitive peak reverse voltage of 650V, a continuous forward current of 30A per leg at 25°C case temperature, and a typical forward voltage of 1.30V at 10A. The device operates within a junction temperature range of -55°C to 175°C.

Diode Arrays Feature Summary

• Utilizes silicon carbide semiconductor material for high-speed switching performance
• Exhibits no reverse recovery charge during turn-off transitions
• Demonstrates temperature-independent switching behavior across the operating range
• Enables system size reduction through lower cooling requirements

Diode Arrays Applications

• Industrial power supplies
• Industrial UPS systems
• Battery chargers
• Solar inverters
• Switch mode power supplies

Diode Arrays Procurement Notes

Verify the manufacturer designation as Hunan Sanan Semiconductor Co., Ltd. on official documentation. Confirm the specific ordering suffix ISATH corresponds to the tube packing type with a unit quantity of 300 EA. Ensure the component meets RoHS compliance standards required for industrial applications before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for designs requiring high-frequency operation and elevated thermal stability. The silicon carbide technology supports higher efficiency compared to silicon-based solutions. Evaluate the thermal resistance from junction to case to determine appropriate heatsinking strategies for maintaining optimal junction temperatures under load conditions.

Diode Arrays Part Context

This part belongs to the SDS065J020G3 series of third-generation SiC Schottky Barrier Diodes. The product line emphasizes reliability and performance in industrial environments. The datasheet indicates that information is derived from engineering lot characterization and may be subject to change without notice regarding limits or test conditions.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Diode Arrays FAQ

What is the maximum surge non-repetitive forward current?

The maximum surge non-repetitive forward current (IFSM) is 80A per leg, measured at a case temperature of 25°C with a 10ms half-sine pulse duration.

How does the forward voltage vary with temperature?

The typical forward voltage increases from 1.30V at 25°C to 1.55V at 175°C when tested at a forward current of 10A.

What is the total capacitive charge specification?

The total capacitive charge (QC) is typically 29nC per leg, measured at a reverse voltage of 400V.