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Product Detailed Parameters
- Description：MOSFET P-CH 200V 4.4A
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SFS9630YDTU is a P-channel Power MOSFET manufactured by Fairchild Semiconductor. It features a TO-220F (TO-261AA) surface-mount package with three terminals. Key electrical parameters include a drain-source breakdown voltage of 200 V and a continuous drain current of 4.4 A. The device exhibits a maximum on-resistance of 0.8 Ω at a gate-source voltage of -10 V. It operates within a temperature range of -55 °C to +150 °C junction temperature, with a power dissipation rating of 74 W.
Feature Summary
- P-channel enhancement mode construction for high-side switching applications
- Integrated avalanche energy capability rated at 563 mJ
- Surface-mount TO-220F package designed for efficient thermal management
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply load switches
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or its successors, noting that acquisition may involve ON Semiconductor inventory. Confirm the specific suffix 'YDTU' corresponds to the tape-and-reel packaging format. Ensure RoHS compliance status matches project requirements, as historical data indicates potential non-compliance for certain variants. Validate the lead time and availability directly with authorized distributors.
Selection Notes
Select this component when a 200 V P-channel MOSFET is required in a surface-mount configuration. The 0.8 Ω on-resistance supports moderate current loads up to 4.4 A. Compare against through-hole alternatives if higher current capacity is needed. Ensure the gate drive voltage aligns with the -10 V threshold for optimal conduction. Verify thermal resistance characteristics fit the PCB layout constraints.
Part Context
This part belongs to the Fairchild SFS series of advanced power MOSFETs. These devices are engineered for general-purpose power switching applications requiring robust performance in compact packages. The series typically includes both N-channel and P-channel options with varying voltage and current ratings to suit diverse power electronics designs.
Replacement Considerations
Direct substitutes include the IRF9630PBF-BE3 from Vishay/Siliconix, which shares identical 200 V/6.5 A specifications and TO-220AB packaging. For surface-mount equivalents, verify pin-compatible P-channel MOSFETs with similar Rds(on) and voltage ratings from manufacturers like STMicroelectronics or Infineon.
