SGB06N60ATMA1

$0.79

Description：IGBT NPT 600V 12A TO263-3-2
Series：-

SKU:efc537784292 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 12A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：12:00 AM
Current - Collector Pulsed (Icm)：24 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 6A
Power - Max：68 W
Switching Energy：215µJ
Input Type：Standard
Gate Charge：32 nC
Td (on/off) @ 25°C：25ns/220ns
Test Condition：400V, 6A, 50Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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SGB06N60ATMA1

Overview

The SGB06N60ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Non-Punch Through (NPT) technology and is housed in a PG-TO-263-3-2 surface-mount package. The device features a maximum collector-emitter voltage of 600 V and a continuous DC collector current rating of 12 A at 25°C case temperature, decreasing to 6.9 A at 100°C. It has a maximum power dissipation of 68 W at 25°C. The saturation voltage is specified as 2.4 V maximum at 150°C junction temperature with a 6 A collector current. The component supports a short-circuit withstand time of 10 µs.

Feature Summary

Utilizes Non-Punch Through (NPT) technology for high ruggedness and temperature-stable behavior.
Features significantly reduced turn-off energy compared to previous generations while maintaining low conduction losses.
Capable of parallel switching due to tight parameter distribution characteristics.
Includes a short-circuit withstand capability of 10 microseconds.

Applications

Motor controls
Inverters

Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Ensure that the component version matches the required JEDEC qualification standards for the target application environment. Cross-reference the datasheet revision number to validate thermal resistance values and electrical limits before finalizing procurement orders.

Selection Notes

Select this component for applications requiring robust performance under high-temperature conditions due to its NPT technology. Consider the 10 µs short-circuit withstand time when designing protection circuits for motor drives or inverters. Evaluate the thermal management requirements based on the 68 W power dissipation limit and the 1.85 K/W junction-to-case thermal resistance provided in the datasheet.

Part Context

This IGBT belongs to Infineon's fast switching product line designed for general-purpose power electronics. The PG-TO-263-3-2 package facilitates surface-mount assembly, making it suitable for compact designs. The device is Pb-free lead plated and RoHS compliant, adhering to environmental standards for electronic components used in industrial and consumer applications.