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Product Detailed Parameters
- Description：IGBT NPT 600V 20A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 10A
- Power - Max：92 W
- Switching Energy：320µJ
- Input Type：Standard
- Gate Charge：52 nC
- Td (on/off) @ 25°C：28ns/178ns
- Test Condition：400V, 10A, 25Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The SGB10N60AATMA1 is a fast N-channel IGBT utilizing Infineon's NPT technology, housed in a PG-TO-263-3-2 surface-mount package. It features a collector-emitter voltage of 600V and a DC collector current of 10A at 100°C case temperature. The device offers a short-circuit withstand time of 10 µs and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- NPT technology ensures tight parameter distribution and high ruggedness for parallel switching applications.
- Optimized switching characteristics provide significantly reduced turn-off energy compared to previous generations.
- Robust short-circuit capability allows for reliable operation under fault conditions up to 10 microseconds.
Applications
- Motor controls
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix 'TMA1' against official Infineon documentation to confirm tape-and-reel packaging and lead-free plating specifications. Ensure the component meets JEDEC qualification standards required for your target application environment before finalizing procurement.
Selection Notes
Select this component for designs requiring high thermal stability and robust short-circuit handling in 600V systems. Consider the PG-TO-263-3-2 package for efficient surface-mount assembly and evaluate the 10µs short-circuit tolerance against your circuit protection requirements.
Part Context
This part belongs to Infineon's TrenchStop family of IGBTs designed for general-purpose power switching. It utilizes Non-Punch-Through (NPT) technology to deliver stable performance across varying temperatures while maintaining low conduction losses.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters and thermal resistance values.
FAQ
What is the maximum short-circuit withstand time for the SGB10N60A?
The device supports a short-circuit withstand time of 10 µs when VGE is 15V, VCC is ≤ 600V, and Tj is ≤ 150°C.
Does the SGB10N60A support parallel switching?
Yes, the NPT technology provides very tight parameter distribution and temperature-stable behavior, enabling parallel switching capability.
What is the operating junction temperature range?
The operating junction and storage temperature range is from -55°C to +150°C.
