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Product Detailed Parameters
- Description：IGBT NPT 600V 31A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：62 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：139 W
- Switching Energy：570µJ
- Input Type：Standard
- Gate Charge：76 nC
- Td (on/off) @ 25°C：32ns/234ns
- Test Condition：400V, 15A, 21Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The SGB15N60 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes FAST IGBT NPT technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 31 A. It operates within a temperature range of -55°C to +150°C, with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Utilizes NPT (Non-Punch-Through) technology for robust blocking capabilities
- Designed for high-speed switching applications via FAST IGBT architecture
- Single configuration optimized for compact surface-mount layouts
Applications
- High-frequency power conversion circuits
- Industrial motor drive inverters
- Uninterruptible power supply (UPS) systems
Procurement Notes
Verify component authenticity through authorized distribution channels due to the discontinued status. Confirm RoHS compliance details as specified in official documentation. Ensure storage conditions align with manufacturer guidelines to maintain junction integrity prior to assembly.
Selection Notes
Select this component for designs requiring 600V isolation with moderate current handling in a surface-mount form factor. Evaluate thermal management requirements given the TO-263-3 package constraints. Consider the discontinuation status when planning long-term production lifecycles.
Part Context
This part belongs to Infineon's discrete IGBT portfolio, specifically leveraging NPT technology for improved short-circuit ruggedness. It serves as a legacy alternative to newer trench technologies, offering proven reliability for standard switching frequencies in industrial and consumer power electronics.
Replacement Considerations
The IGB15N60T is identified as a potential replacement option. Verify pin compatibility and electrical parameters such as saturation voltage and switching times before substitution. Note that the IGB15N60T utilizes TRENCHSTOP technology, which may alter switching characteristics compared to the original FAST IGBT design.
