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Product Detailed Parameters
- Description：IGBT NPT 600V 40A TO263-3-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 20A
- Power - Max：179 W
- Switching Energy：440µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：36ns/225ns
- Test Condition：400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3-2
- Grade：-
- Qualification：-
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Overview
The SGB20N60 is a fast NPT-technology IGBT in the PG-TO-263-3-2 package. It features a collector-emitter voltage of 600 V and a continuous collector current of 40 A at 25°C, dropping to 20 A at 100°C. The saturation voltage is 2.4 V at 20 A and 150°C. Power dissipation reaches 179 W at 25°C case temperature. Short circuit withstand time is 10 µs. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Utilizes NPT technology for tight parameter distribution and parallel switching capability.
- Features short circuit withstand time of 10 µs for high ruggedness.
- Offers reduced turn-off energy compared to previous generations while maintaining low conduction losses.
Applications
- Motor controls
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm datasheet revision matches Rev 2.2 Nov 06. Ensure packaging integrity for the PG-TO-263-3-2 form factor. Check RoHS compliance status as indicated in official documentation before integration into production lines.
Selection Notes
Select this component for applications requiring robust short-circuit handling and stable thermal behavior. The NPT technology ensures reliable performance across varying temperatures. Consider the 600V rating and 40A current capacity for medium-power switching requirements within the specified thermal limits.
Part Context
This device belongs to Infineon's discrete IGBT portfolio designed for general-purpose power switching. It utilizes silicon NPT technology optimized for 600V applications. The component is qualified according to JEDEC standards, ensuring reliability for industrial and automotive-grade environments where consistent electrical characteristics are critical.
Replacement Considerations
No verified public substitute part numbers are available in the provided source material.
FAQ
What is the maximum short circuit withstand time?
The maximum short circuit withstand time is 10 µs under conditions of VGE = 15V, VCC ≤ 600V, and Tj ≤ 150°C.
How does the collector current change with temperature?
The DC collector current is rated at 40 A at a case temperature of 25°C and decreases to 20 A at a case temperature of 100°C.
Is the device suitable for parallel switching?
Yes, the NPT technology provides very tight parameter distribution and high ruggedness, which supports parallel switching capability.
