SGB30N60ATMA1

Description：IGBT NPT 600V 41A TO263-3-2
Series：-

SKU:d6b66a976e3d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 41A TO263-3-2
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：41 A
Current - Collector Pulsed (Icm)：112 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
Power - Max：250 W
Switching Energy：1.29mJ
Input Type：Standard
Gate Charge：140 nC
Td (on/off) @ 25°C：44ns/291ns
Test Condition：400V, 30A, 11Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3-2
Grade：-
Qualification：-

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SGB30N60ATMA1

Overview

The SGB30N60 is a fast NPT-technology IGBT rated for 600V collector-emitter voltage and 30A continuous DC collector current at 25°C. It features a maximum saturation voltage of 2.5V at 150°C, power dissipation up to 250W, and a short circuit withstand time of 10µs. The device operates within a junction temperature range of -55°C to +150°C and utilizes the PG-TO-263-3-2 (D²-PAK) package.

Feature Summary

NPT technology provides tight parameter distribution, high ruggedness, and parallel switching capability.
Optimized for low turn-off energy losses combined with low conduction losses.
Capable of withstanding short circuit conditions for 10 microseconds.

Applications

Motor controls
Inverter circuits

Procurement Notes

Verify the component matches the exact Infineon part number SGB30N60. Confirm the datasheet revision aligns with Rev 2.3 dated 05.03.2009. Ensure the package type is PG-TO-263-3-2. Check RoHS compliance status and Pb-free lead plating specifications before procurement.

Selection Notes

Select this component for applications requiring robust NPT technology and high thermal stability. Consider the 10µs short circuit withstand time for fault protection scenarios. Evaluate the 250W power dissipation rating against the specific case temperature requirements of the design.

Part Context

This device belongs to Infineon's Fast IGBT portfolio utilizing Non-Punch Through technology. It is designed for 600V applications where high ruggedness and temperature-stable behavior are critical. The product spectrum includes complete PSpice models for simulation purposes.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the short circuit withstand time for the SGB30N60?

The device has a short circuit withstand time of 10 µs when VGE is 15V, VCC is ≤ 600V, and Tj is ≤ 150°C.

Does the SGB30N60 support parallel switching?

Yes, the NPT technology used in this device offers parallel switching capability due to its very tight parameter distribution and temperature stable behavior.