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Product Detailed Parameters
- Description：IGBT D2PAK 350V 20A
- Series：*
- Mfr：onsemi
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The SGB8206NSL3G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a D2PAK surface-mount package and is rated for a collector-emitter voltage of 350 V with a continuous collector current capacity of 20 A. The component utilizes N-channel technology, designed for high-efficiency switching applications in power electronics systems requiring robust performance within a compact form factor.
Feature Summary
- N-channel IGBT architecture optimized for ignition and general power switching duties
- D2PAK surface-mount packaging facilitates automated assembly and thermal management
- Rated for 350 V blocking voltage ensuring reliability in medium-voltage circuits
Applications
- Automotive ignition systems
- Industrial motor control drives
- Power supply inverters
Procurement Notes
Verify the specific suffix SL3G against the official datasheet to confirm tape-and-reel or bulk packaging specifications. Ensure the ordering part number matches the exact voltage and current ratings required for the target circuit design. Cross-reference the manufacturer's latest documentation to confirm compliance with RoHS directives and other relevant environmental standards before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a 350 V rating and 20 A continuous current handling capability. The D2PAK package is suitable for designs needing efficient heat dissipation through a printed circuit board copper plane. Consider the switching speed characteristics and gate charge parameters found in the electrical characteristics table when designing the driver circuitry to ensure optimal performance and minimize switching losses.
Part Context
This device belongs to the single IGBT category from onsemi, distinct from their image sensor families like Hyperlux LP. It serves as a discrete power semiconductor component rather than an integrated logic or sensing device. The product line focuses on providing reliable switching solutions for automotive and industrial markets where durability under high voltage conditions is essential.
Replacement Considerations
The NGB8206N is identified as a related variant within the same product family. Verify pinout compatibility and exact electrical parameter tolerances between the SGB8206NSL3G and potential substitutes before implementation.
