SGH10N60RUFDTU

SGH10N60RUFDTU

$1.94
  • Description:IGBT 600V 16A TO-3PN
  • Series:-

SKU:e563f4d57b56 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 16A TO-3PN
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):30 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 10A
  • Power - Max:75 W
  • Switching Energy:141µJ (on), 215µJ (off)
  • Input Type:Standard
  • Gate Charge:30 nC
  • Td (on/off) @ 25°C:15ns/36ns
  • Test Condition:300V, 10A, 20Ohm, 15V
  • Reverse Recovery Time (trr):60 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3PN
  • Grade:-
  • Qualification:-

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SGH10N60RUFDTU

Overview

The SGH10N60RUFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It features an integrated fast recovery diode and utilizes the RUFD series technology for low conduction and switching losses. The device is rated for a maximum collector-emitter voltage of 600 V and a continuous collector current of 16 A at 25°C. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-3P (TO-247AB) flange mount package.

Feature Summary

  • Short circuit ruggedness rated for 10 microseconds at a case temperature of 100°C with a gate-emitter voltage of 15V
  • Integrated fast recovery diode with a typical reverse recovery time of 42 nanoseconds
  • Low saturation voltage of 2.2 V measured at a collector current of 10 A

Applications

  • AC and DC motor controls
  • General purpose inverters
  • Uninterruptible power supplies (UPS)
  • Robotics and servo controls

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi. Confirm the specific suffix DTU corresponds to the TO-3P flange mount package. Ensure the component meets RoHS compliance requirements if applicable to the target assembly process. Cross-reference datasheet revisions to confirm electrical characteristics remain consistent with design specifications.

Selection Notes

Select this component for high-speed switching applications requiring short circuit protection. The integrated FRD reduces external component count compared to standard IGBTs. Evaluate thermal management capabilities given the 16 A continuous current rating. Compare against other RUFD series variants for optimal cost-performance balance in inverter designs.

Part Context

This device belongs to the Fairchild RUFD series of Insulated Gate Bipolar Transistors. The series is engineered to provide low conduction and switching losses alongside enhanced short circuit ruggedness. It serves as a robust solution for power conversion systems where reliability under fault conditions is critical.

Replacement Considerations

Compatible substitutes include the SGS10N60RUF and SGW10N60RUF from the same manufacturer family. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device maintains the required 600 V blocking voltage and 16 A current handling capability.

SGH10N60RUFDTUSGH10N60RUFDTU
$1.94
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