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Product Detailed Parameters
- Description：IGBT 600V 32A 195W TO3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：32 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 20A
- Power - Max：195 W
- Switching Energy：524µJ (on), 473µJ (off)
- Input Type：Standard
- Gate Charge：55 nC
- Td (on/off) @ 25°C：30ns/48ns
- Test Condition：300V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The SGH20N60RUFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Field-Stop technology to achieve low conduction losses and high-speed switching capabilities within a TO-3P-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a power dissipation rating of 140 W, and a gate-emitter voltage range of ±20 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Field-Stop technology integration for optimized trade-off between conduction loss and switching speed.
- Short-circuit rated capability providing robustness against fault conditions in power circuits.
- High thermal stability with a maximum junction temperature rating of 150°C.
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control drives
Procurement Notes
Verify the specific suffix 'DTU' against the official datasheet to confirm packaging details and compliance status. Confirm availability as this component may be subject to lifecycle changes or discontinuation. Ensure the ordering part number matches the exact electrical specifications required for the target application design.
Selection Notes
Select this IGBT when a 600V blocking voltage and 20A continuous current are required in a TO-3P package. Compare the 2.2V saturation voltage and switching times against alternative devices to ensure compatibility with the system's thermal management and efficiency targets. Verify that the gate drive requirements align with the specified ±20V limit.
Part Context
This component belongs to the SGH series of Field-Stop IGBTs from onsemi. These transistors are engineered for high-efficiency power conversion applications. The SGH20N60RUFDTU shares architectural similarities with other members of the family but differs in current handling capacity and specific thermal characteristics defined by its 20A rating.
Replacement Considerations
Direct replacements must match the 600V/20A specification and TO-3P-3 footprint. Verify pinout compatibility and thermal resistance values. Cross-reference with equivalent models from other manufacturers ensuring identical Field-Stop technology and short-circuit ratings.
