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Product Detailed Parameters
- Description：IGBT 600V 48A 235W TO3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 30A
- Power - Max：235 W
- Switching Energy：919µJ (on), 814µJ (off)
- Input Type：Standard
- Gate Charge：85 nC
- Td (on/off) @ 25°C：30ns/54ns
- Test Condition：300V, 30A, 7Ohm, 15V
- Reverse Recovery Time (trr)：95 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The SGH30N60RUFDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a collector-emitter maximum voltage of 600 V and a continuous collector current of 48 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.2 V and supports a power dissipation of 235 W. It operates within a temperature range of -55°C to +150°C, with a gate-emitter voltage limit of ±20 V. The component utilizes a TO-3P-3 flange mount package for through-hole installation.
Feature Summary
- Short circuit rated ruggedness
- High speed switching capability
- Low saturation voltage
Applications
- Motor control systems
- Uninterruptible power supplies (UPS)
- General purpose inverters
Procurement Notes
Verify the specific manufacturer lot and compliance documentation upon acquisition. Confirm that the TO-3P-3 package dimensions match the target thermal interface requirements. Ensure the short circuit rating specifications align with the protection circuit design parameters. Check for any RoHS or REACH compliance updates relevant to the production batch.
Selection Notes
Select this component when high current handling and robust short circuit tolerance are required in a TO-3P package. Compare the 48 A continuous current rating against peak load demands. Evaluate the 2.2 V saturation voltage impact on conduction losses relative to alternative IGBT technologies. Consider the thermal resistance characteristics for heatsink sizing in high-power density designs.
Part Context
This part belongs to the SGH30N60RUFD series of short circuit rated IGBTs from onsemi. It represents a legacy product line originally developed under Fairchild Semiconductor before corporate restructuring. The device is designed for industrial applications requiring reliable switching performance under fault conditions.
Replacement Considerations
Cross-reference with SGH30N60RUFTU for potential pin-compatible alternatives. Verify electrical parameter equivalence with other 600V 48A TO-3P IGBTs from different manufacturers if sourcing constraints exist.
