SGH80N60UFDTU

Description：IGBT 600V 80A 195W TO3P
Series：-

SKU:587300ca9835 Category: Single IGBTs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT 600V 80A 195W TO3P
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：220 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 40A
Power - Max：195 W
Switching Energy：570µJ (on), 590µJ (off)
Input Type：Standard
Gate Charge：175 nC
Td (on/off) @ 25°C：23ns/90ns
Test Condition：300V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)：95 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

Download product information

SGH80N60UFDTU

Overview

The SGH80N60UFDTU is an ultrafast Insulated Gate Bipolar Transistor (IGBT) with a built-in Fast Recovery Diode (FRD), manufactured by onsemi under the Fairchild UFD series. It operates in a TO-3PN package with collector-emitter voltage of 600 V and continuous collector current of 80 A at 25°C. The IGBT exhibits low saturation voltage, while the integrated diode features a typical reverse recovery time of 50 ns.

Feature Summary

High speed switching capability
Low saturation voltage for reduced conduction loss
Integrated FRD with fast reverse recovery characteristics

Applications

AC & DC motor controls
General purpose inverters
Robotics systems
Servo controls

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision status to ensure compatibility with design requirements. Check for RoHS compliance documentation if environmental regulations apply to the specific manufacturing batch.

Selection Notes

Select this component for high-frequency switching applications requiring low conduction losses. Ensure thermal management supports the specified junction temperature range. Verify gate drive voltage levels match the absolute maximum ratings to prevent device damage during operation.

Part Context

This part belongs to the Fairchild Semiconductor UFD series of ultrafast IGBTs. The series is engineered for applications demanding high-speed switching performance combined with low power dissipation characteristics.