SGH80N60UFTU

Overview

The SGH80N60UFTU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) from the UF series, originally manufactured by Fairchild Semiconductor. It features a TO-3PN package with through-hole mounting and single configuration. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 80 A at 25°C case temperature, and a maximum power dissipation of 195 W at 25°C. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• High-speed switching capability designed for applications requiring rapid transitions
• Low saturation voltage characteristics to minimize conduction losses
• High input impedance suitable for efficient gate drive integration

Applications

• AC and DC motor controls
• General purpose inverters
• Robotics systems
• Servo controls

Procurement Notes

Verify component authenticity as this part was originally produced by Fairchild Semiconductor. Confirm that the specific ordering suffix corresponds to the intended packaging or lead-free status. Check for availability of equivalent replacements if original stock is depleted.

Selection Notes

Select this component for high-frequency switching applications where low conduction loss is critical. Ensure thermal management meets the specified junction-to-case resistance requirements. Verify that the gate drive voltage aligns with the 15V typical operating condition for optimal performance.

Part Context

This IGBT belongs to the Ultra-Fast (UF) series, which emphasizes reduced switching times compared to standard IGBTs. The TO-3PN package provides robust mechanical stability and effective heat dissipation for high-power industrial applications.

Replacement Considerations

Check datasheets for other models in the Fairchild/ON Semiconductor UF series with matching 600V ratings and TO-3PN packages. Verify pinout compatibility and thermal resistance values before substitution.