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The SGL5N150UFTU is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, designed for switching power supply applications. It features a collector-emitter voltage of 1500 V and a continuous collector current of 10 A at 25°C case temperature. The device exhibits low saturation voltage, typically 4.7 V at 5 A with a 10 V gate drive. Key electrical parameters include a maximum turn-off delay time of 50 ns and total switching loss up to 580 µJ under specified test conditions. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-264 package.
Verify the component status carefully as the source datasheet indicates potential discontinuation or limited production availability. Confirm that the specific ordering suffix TU corresponds to the required packaging format. Ensure compatibility with existing thermal management designs given the junction-to-case thermal resistance specifications provided in the documentation.
Select this IGBT for high-voltage off-line converter designs requiring robust performance. Evaluate the thermal resistance characteristics against the expected operating ambient temperatures. Consider the gate charge requirements for driver circuit design to ensure optimal switching speed and minimize dynamic losses during operation.
This component belongs to the SGL series of IGBTs from Fairchild Semiconductor, optimized for high-voltage switching applications. The series is characterized by fast switching speeds and low on-state voltage drops, making it suitable for efficient power conversion systems where high reliability and compact size are critical design factors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with alternative high-voltage IGBTs if sourcing this specific discontinued or limited-run component proves difficult.