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Product Detailed Parameters
- Description：IGBT TRENCH 900V 60A TO-264-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：900 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 60A
- Power - Max：180 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：260 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.5 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264-3
- Grade：-
- Qualification：-
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Overview
The SGL60N90DG3TU is a trench gate Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, originally developed by Fairchild Semiconductor. It features a built-in fast recovery diode and operates with a collector-emitter voltage of 900 V and a continuous collector current of 60 A at 25°C. The device has a maximum power dissipation of 180 W and a saturation voltage of 2.7 V max at 60 A. Key electrical parameters include a total gate charge of 260 nC and a diode reverse recovery time of 1.5 µs. It utilizes a TO-264-3 through-hole package and supports junction temperatures from -55°C to +150°C.
Feature Summary
- Trench gate structure for superior conduction and switching performance compared to planar gates
- High noise immunity due to high input impedance
- Integrated fast recovery diode for efficient commutation
Applications
- Induction heating appliances
- Microwave ovens
- Home appliance motor drives
Procurement Notes
Verify the component status carefully as this part number is marked as obsolete or discontinued in multiple distributor databases. Confirm availability of surplus stock or last-time buy options directly with authorized channels. Ensure the datasheet revision matches the specific manufacturing lot requirements for your design lifecycle.
Selection Notes
Select this component for applications requiring high voltage blocking capability up to 900 V and moderate current handling around 60 A. Consider the thermal resistance values when designing heatsinking solutions. Verify that the switching speed and gate charge characteristics align with the drive circuit capabilities and electromagnetic interference constraints of the target system.
Part Context
This device belongs to the SGL60 series of IGBTs produced by Fairchild Semiconductor, which was later acquired by onsemi. The 'G3' suffix typically indicates RoHS compliance and halogen-free packaging standards. The 'TU' suffix denotes the tube packaging format used for distribution.
Replacement Considerations
No direct public substitute part numbers are confirmed in the provided documentation. Designers should evaluate other 900V trench IGBTs with similar current ratings and package types if this obsolete part is required for production.
