SGL60N90DG3YDTU

$2.69

Description：IGBT TRENCH 900V 60A TO-264-3
Series：-

SKU:be99c0f33e66 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 900V 60A TO-264-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 60A
Power - Max：180 W
Switching Energy：-
Input Type：Standard
Gate Charge：260 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：1.5 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264-3
Grade：-
Qualification：-

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SGL60N90DG3YDTU

Overview

The SGL60N90DG3YDTU is a trench-gate Insulated Gate Bipolar Transistor (IGBT) with an integrated fast recovery diode, manufactured by onsemi. It features a collector-emitter breakdown voltage of 900 V and a continuous collector current rating of 60 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum saturation voltage of 2.7 V at 60 A and a total gate charge of 260 nC. The component utilizes a TO-264 package for thermal management.

Feature Summary

Trench gate structure provides superior conduction and switching performance compared to planar gate structures.
High input impedance combined with wide noise immunity for robust operation.
Integrated fast recovery diode reduces system complexity and switching losses.

Applications

Induction heating systems
Home appliances
Microwave ovens

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging or environmental compliance status. Confirm availability as product lifecycle status may vary. Ensure compatibility with existing thermal interface materials and mounting hardware specifications before procurement.

Selection Notes

Evaluate thermal resistance characteristics relative to the application's heat dissipation requirements. Consider the gate charge and threshold voltage when designing the driver circuitry. Verify that the pulsed collector current capability meets the peak load demands of the intended circuit topology.

Part Context

This component belongs to the SGL60 series of high-power IGBTs originally developed by Fairchild Semiconductor. The technology leverages trench gate architecture to minimize conduction losses while maintaining fast switching speeds. It serves as a critical power switching element in high-frequency induction applications.