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The SGP02N120XKSA1 is a single NPT-technology IGBT in the PG-TO-220-3-1 package. It features a collector-emitter voltage of 1200 V and a DC collector current of 6.2 A at 25°C. The device has a maximum power dissipation of 62 W, an off-state energy loss (Eoff) of 0.11 mJ, and a short-circuit withstand time of 10 µs. Operating junction temperature ranges from -55°C to +150°C.
Verify the exact ordering suffix against Infineon's official documentation to confirm the specific package variant and compliance status. Confirm RoHS compliance and lead plating specifications directly with the manufacturer or authorized distributors before procurement.
Select this component for applications requiring high ruggedness and temperature-stable behavior. Ensure the thermal design accommodates the specified junction-to-case thermal resistance and that the gate drive voltage aligns with the 15V standard operating condition.
This part belongs to the SGx02N120 family of fast IGBTs manufactured by Infineon Technologies. The family includes variants such as SGD02N120 and SGI02N120, which share similar electrical characteristics but differ in their physical packaging configurations.
Direct replacements include other parts within the SGx02N120 family, specifically SGD02N120 and SGI02N120, provided the PCB footprint matches the required package type.