SGP02N60XKSA1

Overview

The SGP02N60XKSA1 is a single N-channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It features a TO-220FP package and operates with a drain-source voltage of 600 V. The device exhibits an on-resistance of 3.5 Ω at a gate-source voltage of 10 V. It supports a continuous current of 2 A and dissipates up to 100 W of power. The component is designed for through-hole mounting and functions within a temperature range of -55°C to 175°C.

Feature Summary

• Enhancement-mode operation for efficient switching control
• High voltage blocking capability suitable for robust power applications
• Thermal optimization for reliable heat dissipation in compact designs

Applications

• Motor drive circuits
• Power supply inverters
• Industrial control systems

Procurement Notes

Verify the specific suffix configuration against official datasheets to ensure compatibility with required thermal and electrical specifications. Confirm RoHS compliance status as historical records may vary. Cross-reference manufacturer part numbers to avoid substitution errors during procurement.

Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a standard through-hole footprint. Evaluate thermal management requirements based on the 100 W dissipation rating. Ensure gate drive voltages align with the specified threshold characteristics for optimal performance.

Part Context

This part belongs to Infineon's discrete semiconductor portfolio, specifically categorized under power transistors. It represents a legacy solution for medium-power switching applications where cost-effective through-hole packaging remains preferred over surface-mount alternatives in certain industrial contexts.

Replacement Considerations

The component is listed as obsolete. Engineers should consult official replacement guides or equivalent series from the manufacturer for active alternatives that match the 600 V rating and TO-220FP form factor.