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The SGP07N120XKSA1 is a single Fast IGBT utilizing NPT technology in a PG-TO-220-3-1 package. It features a collector-emitter voltage of 1200 V and a DC collector current of 16.5 A at 25°C. The device has a maximum power dissipation of 125 W, an off-state energy loss of 0.7 mJ, and a short-circuit withstand time of 10 µs. Operating junction temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO-220-3-1 physical footprint and thermal characteristics required by the design. Confirm availability as this part may be subject to lifecycle changes.
Select this component for designs requiring high-voltage isolation and robust thermal stability. The NPT technology ensures tight parameter distribution suitable for parallel operation. Evaluate the 125 W power dissipation limit against the expected case temperature and ambient conditions to ensure safe operating area compliance during continuous duty cycles.
This component belongs to the SGP series of Fast IGBTs manufactured by Infineon Technologies. It utilizes Non-Punch Through (NPT) technology to deliver improved switching characteristics and ruggedness. The device is designed for general-purpose power switching applications where efficiency and reliability are critical requirements.
Consult official Infineon cross-reference lists for verified substitutes. Verify that any replacement maintains the 1200 V rating, TO-220-3 package compatibility, and equivalent switching energy losses.
The maximum short-circuit withstand time is 10 µs.
Yes, the NPT technology provides high ruggedness and temperature-stable behavior, enabling parallel switching capability.
The typical gate-emitter threshold voltage is 4 V.