SGP07N120XKSA1

SGP07N120XKSA1

  • Description:IGBT NPT 1200V 16.5A TO220-3
  • Series:-

SKU:ee10905b5b19 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 1200V 16.5A TO220-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):16.5 A
  • Current - Collector Pulsed (Icm):27 A
  • Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 8A
  • Power - Max:125 W
  • Switching Energy:1mJ
  • Input Type:Standard
  • Gate Charge:70 nC
  • Td (on/off) @ 25°C:27ns/440ns
  • Test Condition:800V, 8A, 47Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:PG-TO220-3-1
  • Grade:-
  • Qualification:-

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Overview

The SGP07N120XKSA1 is a single Fast IGBT utilizing NPT technology in a PG-TO-220-3-1 package. It features a collector-emitter voltage of 1200 V and a DC collector current of 16.5 A at 25°C. The device has a maximum power dissipation of 125 W, an off-state energy loss of 0.7 mJ, and a short-circuit withstand time of 10 µs. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

  • Fast switching performance with reduced turn-off energy compared to previous generations
  • High ruggedness and stable behavior across temperatures due to NPT technology
  • Capable of parallel switching for higher current applications
  • Short circuit withstand capability up to 10 microseconds

Applications

  • Motor controls
  • Inverters
  • Switched-mode power supplies (SMPS)

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Ensure the component matches the PG-TO-220-3-1 physical footprint and thermal characteristics required by the design. Confirm availability as this part may be subject to lifecycle changes.

Selection Notes

Select this component for designs requiring high-voltage isolation and robust thermal stability. The NPT technology ensures tight parameter distribution suitable for parallel operation. Evaluate the 125 W power dissipation limit against the expected case temperature and ambient conditions to ensure safe operating area compliance during continuous duty cycles.

Part Context

This component belongs to the SGP series of Fast IGBTs manufactured by Infineon Technologies. It utilizes Non-Punch Through (NPT) technology to deliver improved switching characteristics and ruggedness. The device is designed for general-purpose power switching applications where efficiency and reliability are critical requirements.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Verify that any replacement maintains the 1200 V rating, TO-220-3 package compatibility, and equivalent switching energy losses.

FAQ

What is the maximum short-circuit withstand time?

The maximum short-circuit withstand time is 10 µs.

Does the SGP07N120 support parallel switching?

Yes, the NPT technology provides high ruggedness and temperature-stable behavior, enabling parallel switching capability.

What is the typical gate-emitter threshold voltage?

The typical gate-emitter threshold voltage is 4 V.

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