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Product Detailed Parameters
- Description：IGBT NPT 1200V 30A TO220-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：52 A
- Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 15A
- Power - Max：198 W
- Switching Energy：1.9mJ
- Input Type：Standard
- Gate Charge：130 nC
- Td (on/off) @ 25°C：18ns/580ns
- Test Condition：800V, 15A, 33Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：PG-TO220-3-1
- Grade：-
- Qualification：-
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Overview
The SGP15N120XKSA1 is a fast NPT-technology IGBT from Infineon Technologies, rated for 1200 V collector-emitter voltage and 30 A DC collector current at 25°C. It features a PG-TO-220-3-1 package with a maximum power dissipation of 198 W. The device exhibits a turn-off energy (Eoff) of 1.5 mJ and supports a short-circuit withstand time of 10 μs. Operating within a junction temperature range of -55°C to +150°C, it includes an anti-parallel diode and meets RoHS compliance standards.
Feature Summary
- Utilizes NPT technology for tight parameter distribution and parallel switching capability
- Features high ruggedness and stable behavior across varying temperatures
- Includes an integrated anti-parallel diode for efficient reverse conduction
- Provides a short-circuit withstand time of 10 μs for enhanced system protection
Applications
- Motor controls
- Inverter circuits
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the component against official Infineon datasheets to confirm authenticity and revision status. Ensure the ordering suffix matches the required package type. Check for specific JEDEC qualification requirements relevant to your target application environment before finalizing procurement decisions.
Selection Notes
Select this component when designing systems requiring robust NPT technology with high thermal stability. Consider its 10 μs short-circuit withstand capability for applications demanding significant fault tolerance. Evaluate the 198 W power dissipation limit relative to your cooling strategy and ambient operating conditions.
Part Context
This part belongs to the SGP series of fast IGBTs manufactured by Infineon Technologies. It is designed as a replacement or upgrade for previous generations, offering improved efficiency through reduced switching losses. The device is specifically engineered for high-reliability power electronics applications.
Replacement Considerations
Refer to official Infineon documentation for direct cross-reference data. Verify pinout compatibility and thermal resistance characteristics when substituting similar IGBT models in existing designs.
FAQ
What is the maximum short-circuit withstand time for the SGP15N120?
The device supports a short-circuit withstand time of 10 μs under specified gate-emitter voltage and junction temperature conditions.
Does the SGP15N120 include an internal diode?
Yes, the component integrates an anti-parallel diode to facilitate reverse current flow within the circuit.
What packaging option is available for the SGP15N120XKSA1?
The SGP15N120XKSA1 variant utilizes the PG-TO-220-3-1 package configuration.
