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The SGP6N60UFDTU is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor. It features a single N-channel configuration housed in a TO-264 package with three terminals. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 160 A. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a saturation voltage of 2.5 V at 80 A, and a fall time of 350 ns. The component operates within a temperature range from -55 °C to +150 °C and has a maximum power dissipation rating of 250 W.
Verify the specific suffix DTU to confirm the tape-and-reel packaging format required for automated assembly processes. Confirm RoHS compliance status as it may vary by production batch or region. Ensure the ordering information matches the exact thermal and mechanical specifications needed for the target PCB footprint.
Select this component when high current handling up to 160 A is required alongside fast switching speeds. The TO-264 package offers robust thermal performance suitable for high-power density designs. Compare the saturation voltage and fall time against alternative IGBTs to ensure compatibility with the driver circuit's switching frequency requirements.
This part belongs to Fairchild's UF series of ultra-fast IGBTs. The series is engineered to provide low conduction and switching losses. It serves as a high-performance solution for applications demanding rapid switching transitions and high reliability in power conversion environments.
Direct substitutes include the SGP6N60UFTU, which shares identical electrical characteristics but utilizes tube packaging instead of tape-and-reel. Verify that the replacement maintains the same TO-264 outline dimensions and terminal arrangement.