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Product Detailed Parameters
- Description：IGBT TRENCH 400V TO-252AA
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：8V @ 4.5V, 150A
- Power - Max：45 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA
- Grade：-
- Qualification：-
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Overview
The SGR20N40LTF is a trench-gate Insulated Gate Bipolar Transistor (IGBT) designed for strobe flash applications. It features high input impedance and easy gate drive characteristics. The device supports a collector-emitter voltage of 400V and a pulsed collector current of 150A. Maximum power dissipation is rated at 45W at 25°C case temperature. Operating junction temperature ranges from -40°C to +150°C. Thermal resistance from junction to case is 3.0°C/W, while junction-to-ambient resistance is 50°C/W in the D-PAK package.
Feature Summary
- Trench gate structure provides superior conduction and switching performance compared to planar gate structures.
- Built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities.
Applications
- Strobe flash systems
Procurement Notes
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific ordering suffix 'TF' corresponds to the required tape-and-reel packaging variant rather than standard tube packaging. Ensure the component meets RoHS compliance requirements if applicable to your assembly process.
Selection Notes
Select this IGBT when designing circuits requiring high peak current handling up to 150A with low saturation voltage. The internal clamping diodes simplify driver design by protecting against gate overvoltage. Consider the thermal resistance values when calculating heatsink requirements for continuous operation near maximum ratings.
Part Context
This component belongs to the SGR/SGU series of trench-gate IGBTs originally manufactured by Fairchild Semiconductor. The 'S' prefix denotes the surface mount D-PAK package variant, while 'G' indicates the through-hole I-PAK version. These devices were engineered specifically for automotive lighting and camera flash applications requiring fast switching and ruggedness.
Replacement Considerations
Direct replacements include the SGU20N40L for through-hole implementations or other trench-gate IGBTs with similar 400V ratings and 150A pulsed current capabilities. Verify pinout compatibility and thermal resistance specifications before substituting.
