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The SGS23N60UFDTU is a single ultra-fast IGBT with an integrated fast recovery diode (FRD) manufactured by onsemi. It utilizes the CO-PAK package and operates in a TO-220F form factor. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 23 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 2.1 V at 12 A, a gate threshold voltage range of 3.5 V to 6.5 V, and a total switching loss of 250 µJ under standard test conditions. The integrated diode exhibits a reverse recovery time of 42 ns typical.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific ordering suffixes that may alter pinout or thermal characteristics. Review datasheet revisions to ensure alignment with current manufacturing specifications before finalizing procurement orders.
Evaluate thermal resistance values against expected operating temperatures to determine adequate heatsinking requirements. Compare switching energy losses with alternative devices to optimize system efficiency. Ensure gate drive voltage levels remain within the specified ±20 V limit to prevent device damage during operation.
This component belongs to the UFD series of Insulated Gate Bipolar Transistors originally developed by Fairchild Semiconductor. The series focuses on reducing both conduction and switching losses for high-frequency power conversion applications. The part represents a discrete solution combining an N-channel IGBT with a complementary diode in a single flange-mount package.
Direct substitutes include the SGH23N60UFD and SGW23N60UF from the same manufacturer family. Verify pin compatibility and thermal resistance specifications when considering cross-manufacturer alternatives to ensure mechanical fit and electrical performance match.