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The SGS5N150UF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, designed for switching power supply applications. It features a collector-emitter voltage rating of 1500 V and a continuous collector current of 10 A at 25°C case temperature, reducing to 5 A at 100°C. The device exhibits a low saturation voltage of 4.7 V at 5 A and offers high-speed switching capabilities with a total gate charge of 30 nA typical. Packaged in a TO-220F format, it supports a maximum junction temperature of 150°C and includes thermal resistance specifications of 2.5 °C/W junction-to-case.
Verify the specific ordering suffix and manufacturer designation carefully, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm availability status, as older IGBT models may be subject to discontinuation or limited production runs. Ensure that the package type matches the required PCB footprint and thermal management strategy for the target design.
Select this component for high-voltage off-line converter designs requiring robust blocking capabilities up to 1500 V. Evaluate the thermal performance against the application's duty cycle, utilizing the provided transient thermal impedance data. Consider the 4.7 V saturation voltage impact on conduction losses at the expected operating current levels to ensure efficiency targets are met within the specified temperature range.
This IGBT belongs to the family of high-voltage switching devices intended for industrial and commercial power conversion systems. It shares functional similarities with other 1500 V IGBTs but is distinguished by its specific saturation voltage and switching loss profile optimized for off-line topologies. The TO-220F package provides a standardized mounting solution for through-hole assembly in medium-power applications.
Direct substitutes include the SGF5N150UF and SGS5N150UFTU, which share identical electrical ratings and pin configurations. Verify compatibility with existing gate drive circuits when transitioning between these variants.