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SGSD100 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is TRANS NPN DARL 80V 25A TO-247-3. Review the specifications below when checking this part for your BOM.
The SGSD100 is an NPN power transistor in a monolithic Darlington configuration, housed in a TO-247 package. It features a collector-emitter voltage of 80 V and a continuous collector current of 25 A. Peak collector current reaches 40 A for pulses under 5 ms. Total power dissipation is 130 W at a case temperature of 25 °C. The maximum operating junction temperature is 150 °C, with a thermal resistance from junction to case of 0.96 °C/W.
Verify the specific ordering code matches the required component variant. Confirm that the package type aligns with the intended PCB footprint and mounting requirements. Ensure the thermal management design accommodates the specified power dissipation limits. Check for any environmental compliance markings on the packaging if applicable to your manufacturing standards.
Select this component for high-current amplification and switching tasks requiring robust drive capabilities. Consider the complementary PNP type SGSD200 for push-pull configurations. Evaluate the thermal resistance and heat sinking needs based on the expected operating conditions and ambient temperatures to ensure reliable performance within the specified junction temperature limits.
This device belongs to a family of complementary power Darlington transistors manufactured by STMicroelectronics. It is designed for general-purpose and high-current amplifier applications. The complementary PNP counterpart is the SGSD200. Both devices are available in the TO-247 plastic package, providing a standardized solution for power electronics designs.
No public confirmed substitute part numbers are available.
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