SGW10N60AFKSA1

Overview

The SGW10N60AFKSA1 is a fast NPT-technology IGBT in the PG-TO-247-3 package. It features a collector-emitter voltage of 600 V and a DC collector current of 20 A at 25°C, dropping to 10.6 A at 100°C. The saturation voltage is 2.3 V at 10 A. It offers a short circuit withstand time of 10 µs and an avalanche energy rating of 70 mJ. Power dissipation reaches 92 W at 25°C case temperature.

Feature Summary

• Utilizes NPT technology for high ruggedness and parallel switching capability
• Features 75% lower turn-off energy compared to previous generations
• Supports short circuit conditions for up to 10 microseconds

Applications

• Motor controls
• Inverter circuits

Procurement Notes

Verify the specific suffix 'FKSA1' against official Infineon documentation to confirm lead plating and packaging details. Ensure the component meets RoHS compliance standards as indicated by Pb-free lead plating specifications. Cross-reference the datasheet revision to validate thermal resistance values before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high ruggedness and tight parameter distribution. The NPT technology ensures stable behavior across varying temperatures. Consider the 10 µs short circuit withstand time for robust protection schemes. Evaluate the 2.3 V saturation voltage for conduction loss optimization in 600 V systems.

Part Context

This device belongs to the SGx10N60A series of fast IGBTs manufactured by Infineon Technologies. It shares core electrical characteristics with the SGP10N60A variant, differing primarily in the physical package configuration. The PG-TO-247-3 package provides enhanced thermal performance suitable for higher power density designs.

Replacement Considerations

The SGP10N60A serves as a direct functional substitute within the same series, offering identical electrical parameters. Verify that the target application can accommodate the PG-TO-220-3-1 package dimensions if replacing the TO-247-3 variant.