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Product Detailed Parameters
- Description：IGBT NPT 600V 36A TO247-3
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：36 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：3.15V @ 15V, 20A
- Power - Max：178 W
- Switching Energy：690µJ
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：18ns/207ns
- Test Condition：400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The SGW20N60HS is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes High Speed Non-Punch Through (NPT) technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 41 A at 25°C. It operates within a temperature range of -55°C to +150°C, with a maximum power dissipation of 170 W.
Feature Summary
- High speed switching performance enabled by NPT technology
- Integrated anti-parallel diode for inductive load applications
- Robust thermal management via TO-247-3 flange mount
Applications
- Motor control systems
- Inverter circuits
- Switched-mode power supplies
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolete lifecycle indicators before procurement planning. Ensure supply chain stability due to potential discontinuation risks associated with legacy product lines.
Selection Notes
Select this component for high-voltage switching applications requiring fast recovery characteristics. Compare saturation voltage and switching energy losses against alternative IGBT families. Verify thermal resistance parameters match the specific heatsink design requirements for the target operating environment.
Part Context
This part belongs to the SGW series of High Speed IGBTs from Infineon. It shares the TO-247-3 form factor with other high-power discrete devices but is distinct from the IKW or SKW series which may feature different technologies like Trenchstop or EmCon diodes. It serves as a specialized solution for 600V applications prioritizing switching speed over conduction loss minimization.
Replacement Considerations
Direct substitutes are not explicitly listed in public documentation. Evaluate alternatives such as the SKW20N60 or IKW20N60H3FKSA1 based on pin compatibility and electrical parameter overlap. Verify that replacement devices meet the required switching frequency and short-circuit withstand time specifications.
