SGW25N120FKSA1

Description：IGBT NPT 1200V 46A TO247-3
Series：-

SKU:8431a1b0a9cf Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 46A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：46 A
Current - Collector Pulsed (Icm)：84 A
Vce(on) (Max) @ Vge, Ic：3.6V @ 15V, 25A
Power - Max：313 W
Switching Energy：3.7mJ
Input Type：Standard
Gate Charge：225 nC
Td (on/off) @ 25°C：45ns/730ns
Test Condition：800V, 25A, 22Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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SGW25N120FKSA1

Overview

The SGW25N120 is a fast NPT-technology IGBT in the PG-TO-247-3 package. It features a collector-emitter voltage of 1200 V and a DC collector current of 25 A at 100°C. The device offers a short circuit withstand time of 10 µs, an avalanche energy rating of 130 mJ, and a maximum power dissipation of 313 W. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Utilizes NPT technology for tight parameter distribution and high ruggedness
Features a 10 µs short circuit withstand capability
Offers reduced turn-off energy compared to previous generations
Supports parallel switching operations

Applications

Motor controls
Inverters
Switching mode power supplies (SMPS)

Procurement Notes

Verify component authenticity by matching the marking code 'SGW25N120' on the package against official Infineon documentation. Confirm the PG-TO-247-3 package style and ensure compliance with RoHS standards. Cross-reference datasheet revision Rev 2.5 Nov. 09 for accurate electrical specifications before integration into designs.

Selection Notes

Select this component for applications requiring robust short-circuit protection and high thermal stability. The NPT technology ensures stable behavior across wide temperature ranges. Evaluate gate resistance requirements to optimize switching losses, as total switching energy varies significantly with collector current and junction temperature conditions.

Part Context

This part belongs to Infineon's Fast IGBT series utilizing Non-Punch Through (NPT) technology. It is designed to replace older generation devices while offering improved performance metrics such as lower turn-off energy. The product spectrum includes complete PSpice models for simulation purposes.

Replacement Considerations

The datasheet indicates the device is designed for 40% lower Eoff compared to previous generations. No specific substitute part numbers are documented in the provided source material.