SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SGW30N60FKSA1 is a single N-channel IGBT from Infineon Technologies, utilizing NPT technology for 600V applications. It features a PG-TO-247-3 package with through-hole mounting. Key electrical ratings include a collector-emitter voltage of 600 V, a DC collector current of 41 A at 25°C and 30 A at 100°C, and a maximum power dissipation of 250 W. The device supports a short circuit withstand time of 10 µs and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm lead-free plating and RoHS compliance status. Confirm package designation matches PG-TO-247-3 requirements. Ensure sourcing channels provide valid datasheet references matching the SGW30N60 series specifications before procurement.
Select this component for designs requiring robust performance in 600V environments. Consider the thermal resistance of 0.5 K/W for heat sink calculations. Evaluate gate resistor values to optimize switching speed versus loss trade-offs based on the provided dynamic characteristic curves.
This part belongs to the SGW30N60 family of fast IGBTs manufactured by Infineon Technologies. It shares core characteristics with the SGP30N60 variant but utilizes a different physical package configuration suitable for higher power density or specific board layout constraints.
Public confirmed substitute part numbers are not available in the verified source material.