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The SH32N65DM6AG is an automotive-grade N-channel half-bridge power MOSFET module from STMicroelectronics, utilizing MDmesh DM6 technology. Packaged in the ACEPACK SMIT surface-mount format, it integrates two switches with a DBC substrate for low thermal resistance and high isolation (3.4 kVrms). Key electrical ratings include a 650 V drain-source breakdown voltage, 32 A continuous drain current at 25 °C, and a maximum on-resistance of 97 mΩ. The device features fast-recovery body diodes with low switching energies, supporting robust performance in demanding power conversion topologies.
Verify component authenticity by cross-referencing the marking code H32N65DM6 against official datasheet specifications. Confirm that the delivered units match the ACEPACK SMIT package outline and pinout configuration to ensure compatibility with intended PCB footprints and assembly processes.
Select this module when designing compact, high-efficiency power stages requiring integrated half-bridge functionality. The ACEPACK SMIT package offers superior thermal management through its isolated top-side pad and DBC substrate, making it suitable for applications where space constraints and heat dissipation are critical design factors.
This component belongs to the MDmesh DM6 series, which optimizes super-junction technology for fast-recovery diode characteristics. It represents an evolution in ST's automotive-grade power modules, combining improved RDS(on) per area with enhanced switching behavior compared to previous generations.
Direct substitutes within the same family include SH68N65DM6AG and SH63N65DM6AG, which share the ACEPACK SMIT package and half-bridge topology but differ in current handling and on-resistance values.