SH8J62TB1

Overview

The SH8J62TB1 is a dual P-channel MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 7 A. The device exhibits a typical on-resistance of 29 mΩ at Vgs = -4.5 V. Key electrical parameters include a gate-source voltage limit of ±20 V, a threshold voltage of 2.5 V, and a total gate charge of 18 nC. Power dissipation is rated at 2 W, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

• Dual P-channel configuration integrated into a compact SOP-8 surface-mount package.

Applications

• Switching applications requiring dual channel control.

Procurement Notes

Verify the exact part number suffix against official ROHM documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement plans.

Selection Notes

Select this component for designs requiring dual P-channel switching within a 30 V system. Ensure the thermal management strategy supports the 2 W power dissipation rating in the SOP-8 package. Verify that the drive voltage aligns with the specified gate-source limits and threshold characteristics.

Part Context

This component belongs to ROHM's lineup of dual MOSFETs designed for space-constrained surface-mount applications. The SOP-8 package provides a balance between pin count and board area efficiency. It serves as a specific variant within the broader family of P-channel power transistors offered by the manufacturer.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully when considering equivalent parts from other manufacturers to ensure compatibility with existing circuit designs.