SH8J65TB1

Overview

The SH8J65TB1 is a dual P-channel MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications in SOP-8 packages. It features a drain-source breakdown voltage of 30 V and supports continuous drain currents up to 7 A. The device exhibits a typical on-resistance of 29 mΩ with a gate-source threshold voltage of 2.5 V. Key switching parameters include a gate charge of 18 nC, rise time of 40 ns, and fall time of 65 ns. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 2 W.

Feature Summary

• Dual P-channel configuration integrated into a single compact package
• Low on-resistance characteristics for efficient power switching
• High thermal stability supporting extended operating temperatures

Applications

• Power management circuits requiring dual channel control
• Battery protection systems utilizing low-voltage switching
• General-purpose load switching in consumer electronics

Procurement Notes

Verify the specific ordering suffix and tape/reel specifications against the official ROHM datasheet before procurement. Confirm that the SOP-8 package dimensions match your PCB footprint requirements. Ensure compliance with RoHS directives as indicated in the component documentation. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and current availability status.

Selection Notes

Select this component when a dual P-channel solution is required within a 30 V system. The 29 mΩ on-resistance suits applications prioritizing conduction loss reduction. Verify that the 7 A current rating meets peak load demands. Consider the SOP-8 package constraints for thermal management and board space. Ensure gate drive voltages align with the specified threshold and maximum ratings.

Part Context

This component belongs to ROHM's discrete MOSFET lineup, specifically targeting low-voltage switching applications. It serves as a complementary pair solution, eliminating the need for separate single-channel devices. The SOP-8 form factor allows for density optimization compared to dual discrete packages. It fits within the broader category of silicon-based enhancement mode transistors used in portable and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult ROHM technical support or authorized distributors for equivalent dual P-channel MOSFETs with matching 30 V and 7 A specifications if replacement is necessary.