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Product Detailed Parameters
- Description：MOSFET 2P-CH 40V 8.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Rds On (Max) @ Id, Vgs：15.3mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2870pF @ 20V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8JB5TB1 is a dual P-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage of -40V and a continuous drain current of -8.5A. The device exhibits low on-resistance, specified at 15 mΩ typ at VGS = -4.5V and 12.4 mΩ typ at VGS = -10V. Key electrical parameters include a total gate charge of 25 nC, power dissipation of 2W, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration within a compact SOP-8 surface mount package
- Low on-resistance optimized for efficient switching applications
- Lead-free plating compliant with RoHS standards and halogen-free construction
Applications
- General purpose switching circuits
- Power management modules
- Consumer electronic device power stages
Procurement Notes
Verify the specific ordering suffix and tape quantity against official ROHM documentation before procurement. Confirm that the component meets the required automotive or industrial qualification standards if applicable, as standard grade products may have specific usage restrictions. Ensure storage conditions remain within the specified temperature limits to maintain device integrity.
Selection Notes
Select this component when a dual P-channel topology is required in an SOP-8 footprint. The -40V rating suits low-voltage DC-DC converters and load switches. Compare the 15 mΩ on-resistance at -4.5V drive against alternatives if low-side N-channel options are viable. Verify thermal performance under maximum load conditions given the 2W power dissipation limit.
Part Context
This part belongs to the SH8JB5 series of dual P-channel MOSFETs from ROHM. It shares the SOP-8 package code with other variants in the lineup but differs in voltage and current ratings. The TB1 suffix typically denotes the taping reel packaging format used for automated assembly processes.
Replacement Considerations
Direct replacements must match the SOP-8 package, -40V VDS, and dual P-channel polarity. Evaluate competitors based on comparable RDS(on) values at similar gate drive voltages (-4.5V or -10V). Ensure pinout compatibility and thermal characteristics align with the original design constraints.
