SH8JC5TB1

Overview

The SH8JC5TB1 is a dual P-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (V_DSS) of -60 V and a continuous drain current (I_D) of -7.5 A. The device exhibits low on-resistance, specified at 0.028 Ω at V_GS = -4.5 V and 0.025 Ω at V_GS = -10 V. Key electrical parameters include a total gate charge (Q_g) of 23 nC, power dissipation (P_D) of 2 W, and a drive voltage of -4.5 V. The component operates within a storage temperature range of -55°C to 150°C.

Feature Summary

• Dual P-channel configuration integrated into a compact SOP-8 surface-mount package for space-constrained designs.
• Low on-resistance characteristics optimized for efficient switching applications.
• Lead-free plating compliant with RoHS standards and halogen-free construction.

Applications

• General purpose switching circuits
• Motor driver interfaces

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the application environment does not require automotive-grade qualification, as this standard-level product is explicitly noted as unsuitable for车载 equipment. Cross-reference the part number with authorized distributors to validate authenticity and current production status.

Selection Notes

Select this component when a dual P-channel topology is required in a small footprint. Ensure the circuit design accommodates the -60 V voltage rating and -7.5 A current limit. Verify that the gate drive voltage aligns with the specified -4.5 V or -10 V thresholds to achieve the target on-resistance values. Consider the 2 W power dissipation limit and thermal management requirements for the SOP-8 package.

Part Context

The SH8JC5TB1 belongs to ROHM's series of dual power MOSFETs designed for general-purpose switching. It shares the SOP-8 form factor with other models in the family but is distinct due to its P-channel polarity and -60 V rating. This configuration allows for complementary high-side or half-bridge arrangements without requiring separate discrete components.

Replacement Considerations

Potential substitutes include other dual P-channel MOSFETs in SOP-8 packages with similar voltage and current ratings, such as the SH8JB5 (-40V, -8.5A). Verify pin compatibility and electrical parameters before substitution.